Discrete Semiconductors

SS34

GS1M

BZT52C6V2S

BZT52C5V1

Manganin Epoxy SMD Chip Resistors 2725 - 0.5mΩ - 5%

5Mbps CAN Transceiver SOP-8 CAN Transceivers ROHS

50nA 2 300V/ms 2mV SOP-8 Operational Amplifier ROHS

SOP-8 AC-DC Controllers and Regulators ROHS

Green LED Indication - Discrete 2.2V Radial

GAS DISCHARGETUBES 75V DC Breakdown Voltage ±20% Tolerance ≤600V Impulse Spark-over Voltage 10 Impulse Discharge C…

Rectifier diode, US1j, 1.7V@1A 75ns 1A 1kV SMA(DO-214AC) Fast Recovery / High Efficiency Diodes ROHS

10A10

10A6

VBPB165R20S is a high voltage unipolar N-channel MOSFET in TO3P package. Designed to handle high voltage and high curre…

VBP15R25S is a high voltage single N-channel MOSFET in TO247 package. The device has a drain-source voltage (VDS) of 50…

https://www.vbsemi.com/data/upload/file/VBMB2611.pdf

The VBM2611 is a high-performance P-channel MOSFET in a TO220 package. Designed to handle high current and high power a…

The VBM2124N is a high-performance P-channel MOSFET designed for high voltage and high current applications. The MOSFET…

VBL2104N is a high-performance P-channel MOSFET in TO-263 package, designed for medium-high voltage and high current ap…

VBFB1638 is a high-performance single N-channel MOSFET in TO251 package. It has a drain-source voltage (VDS) of 60V, a …

The VBFB1206N is a high-performance N-channel power MOSFET packaged in a TO251 package, suitable for applications that …

VBF2317 is a high-performance unipolar P-channel MOSFET in TO251 package. Designed for high current and low on-resistan…

VBF1206 is a high-performance single N-channel MOSFET in TO251 package. It has excellent electrical characteristics and…

VBE2355