The VBM2611 is a high-performance P-channel MOSFET in a TO220 package. Designed to handle high current and high power applications, the device features a -60V drain-source voltage (VDS), ±30V gate-source voltage (VGS) tolerance, and 2V threshold voltage (Vth). The VBM2611 uses Trench technology, providing extremely low on-resistance and excellent current handling capabilities, making it suitable for a variety of applications with high power requirements.
| Spec | Value |
|---|---|
| Part Number | VBM2611 |
| Manufacturer | VBsemi |
| Package | TO220 |
| No additional technical data available. | |
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